|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
$19.12
-
638In Stock
|
Mouser Part #
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
638In Stock
|
|
|
$19.12
|
|
|
$13.95
|
|
|
$11.33
|
|
|
$11.32
|
|
|
$10.78
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
$19.28
-
303In Stock
|
Mouser Part #
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
303In Stock
|
|
|
$19.28
|
|
|
$15.88
|
|
|
$12.18
|
|
|
$10.89
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
$19.35
-
136In Stock
|
Mouser Part #
511-SCT040HU65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
136In Stock
|
|
|
$19.35
|
|
|
$13.56
|
|
|
$11.79
|
|
|
$11.01
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
$21.26
-
47In Stock
|
Mouser Part #
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
47In Stock
|
|
|
$21.26
|
|
|
$17.05
|
|
|
$14.90
|
|
|
$10.77
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
$18.56
-
85In Stock
|
Mouser Part #
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85In Stock
|
|
|
$18.56
|
|
|
$12.99
|
|
|
$11.18
|
|
|
$10.45
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
$13.54
-
564In Stock
|
Mouser Part #
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
564In Stock
|
|
|
$13.54
|
|
|
$9.27
|
|
|
$6.86
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
$24.25
-
470In Stock
|
Mouser Part #
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
470In Stock
|
|
|
$24.25
|
|
|
$17.89
|
|
|
$12.41
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
$26.78
-
90In Stock
|
Mouser Part #
511-SCTWA40N12G24AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90In Stock
|
|
|
$26.78
|
|
|
$19.03
|
|
|
$16.67
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
$20.33
-
3In Stock
|
Mouser Part #
511-SCT070HU120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
3In Stock
|
|
|
$20.33
|
|
|
$14.03
|
|
|
$12.61
|
|
|
$12.05
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
$44.41
-
101In Stock
|
Mouser Part #
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
101In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
$52.60
-
281In Stock
-
NRND
|
Mouser Part #
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
281In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
$49.21
-
28In Stock
|
Mouser Part #
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
$26.17
-
-
New Product
|
Mouser Part #
511-SCT025H120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
|
|
|
$26.17
|
|
|
$18.57
|
|
|
$17.34
|
|
|
$16.18
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
$36.72
-
|
Mouser Part #
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
$20.62
-
-
New Product
|
Mouser Part #
511-SCT027HU65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
|
|
|
$20.62
|
|
|
$15.39
|
|
|
$13.31
|
|
|
$11.77
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
$19.35
-
|
Mouser Part #
511-SCT040H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
|
|
|
$19.35
|
|
|
$13.56
|
|
|
$11.79
|
|
|
$11.01
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
$19.23
-
|
Mouser Part #
511-SCT055HU65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
|
|
|
$19.23
|
|
|
$13.45
|
|
|
$11.67
|
|
|
$10.89
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
$14.03
-
|
Mouser Part #
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
|
|
|
$14.03
|
|
|
$8.25
|
|
|
$7.20
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
$25.60
-
100On Order
-
New Product
|
Mouser Part #
511-SCT025H120G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100On Order
|
|
|
$25.60
|
|
|
$19.81
|
|
|
$17.14
|
|
|
$17.13
|
|
|
$15.14
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
$17.54
-
100On Order
-
New Product
|
Mouser Part #
511-SCT040W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100On Order
|
|
|
$17.54
|
|
|
$10.64
|
|
|
$9.81
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCTHC250N120G3AG
- STMicroelectronics
-
1:
$115.02
-
-
New Product
|
Mouser Part #
511-SCTHC250N120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
|
|
|
|
|
$115.02
|
|
|
$92.95
|
|
|
$87.15
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
STPAK-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
239 A
|
10.5 nC
|
- 10 V, + 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
1:
$35.43
-
Non-Stocked Lead-Time 21 Weeks
-
New Product
|
Mouser Part #
511-SCT011H75G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
Non-Stocked Lead-Time 21 Weeks
|
|
|
$35.43
|
|
|
$30.67
|
|
|
$26.06
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
- SCT014HU65G3AG
- STMicroelectronics
-
600:
$21.81
-
Non-Stocked Lead-Time 22 Weeks
-
New Product
|
Mouser Part #
511-SCT014HU65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
|
|
Non-Stocked Lead-Time 22 Weeks
|
|
Min.: 600
Mult.: 600
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT014TO65G3
- STMicroelectronics
-
1,800:
$16.03
-
Non-Stocked Lead-Time 20 Weeks
-
New Product
|
Mouser Part #
511-SCT014TO65G3
New Product
|
STMicroelectronics
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
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Non-Stocked Lead-Time 20 Weeks
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Min.: 1,800
Mult.: 1,800
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1,800
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
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1,000:
$13.48
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Non-Stocked Lead-Time 21 Weeks
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New Product
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Mouser Part #
511-SCT018H65G3-7
New Product
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STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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Non-Stocked Lead-Time 21 Weeks
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Min.: 1,000
Mult.: 1,000
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1,000
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SMD/SMT
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H2PAK-7
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N-Channel
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1 Channel
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650 V
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55 A
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27 mOhms
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-10 V, 22 V
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4.2 V
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79.4 nC
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- 55 C
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+ 175 C
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385 W
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Enhancement
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