SCT025H120G3-7

STMicroelectronics
511-SCT025H120G3-7
SCT025H120G3-7

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
100
Factory Lead-Time:
21
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$25.60 $25.60
$19.81 $198.10
$17.14 $1,714.00
$17.13 $8,565.00
Full Reel (Order in multiples of 1000)
$15.14 $15,140.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
H2PAK-7
N-Channel
1 Channel
1.2 kV
55 A
37 mOhms
- 10 V, + 22 V
3 V
73 nC
- 55 C
+ 175 C
375 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Fall Time: 25 ns
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 27 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 23 ns
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.

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