onsemi UF3SC High-Performance SiC FETs in D2-PAK
onsemi UF3SC High-Performance SiC FETs in D2-PAK-7L (7-lead Kelvin package) are based on a unique 'cascode' circuit configuration and feature excellent reverse recovery. This circuit configuration includes a normally-on SiC JFET to be co-packaged with Si MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These high-performance SiC FETs operate at 175°C maximum temperature, 43nC low gate charge, and 5V typical threshold voltage. Typical applications include telecom and server power, motor drives, induction heating, and industrial power supplies.
Features
- 650V 30mΩ and 40mΩ; and 1200V 40mΩ
- ESD protected and HBM class 2
- Gate-drive characteristics with drop-in replacement
- 175°C maximum operating temperature
- 43nC low gate charge
- 5V typical threshold voltage
- Kelvin source pin for optimized switching performance
Applications
- Telecom and server power
- Motor drives
- Induction heating
- Industrial power supplies
- Power factor correction modules
Package Outline
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Published: 2021-05-27
| Updated: 2025-07-25