IRS2011STRPBF

Infineon Technologies
942-IRS2011STRPBF
IRS2011STRPBF

Mfr.:

Description:
Gate Drivers 200V high & low-side,1A,60ns,DSO-8

Datasheet:
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Learn more about Infineon Technologies IRS2011STRPBF

In Stock: 6,555

Stock:
6,555 Can Ship Immediately
Factory Lead-Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$1.72 $1.72
$1.24 $12.40
$1.12 $28.00
$0.988 $98.80
$0.926 $231.50
$0.897 $448.50
Full Reel (Order in multiples of 2500)
$0.897 $2,242.50
$0.875 $4,375.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:
IRS2011SPBF
Packaging:
Tube
Availability:
In Stock
Price:
$4.33
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SOIC-8
2 Driver
2 Output
1 A
10 V
20 V
Inverting
25 ns
15 ns
- 40 C
+ 125 C
IR(S)201X
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: TH
Country of Diffusion: GB
Country of Origin: GB
Features: Independent
Logic Type: CMOS, TTL
Maximum Turn-Off Delay Time: 80 ns
Maximum Turn-On Delay Time: 80 ns
Moisture Sensitive: Yes
Off Time - Max: 80 ns
Operating Supply Current: 300 uA
Pd - Power Dissipation: 625 mW
Product Type: Gate Drivers
Propagation Delay - Max: 80 ns
Shutdown: No Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 540 mg
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CAHTS:
8542310000
CNHTS:
8542399000
USHTS:
8542310075
KRHTS:
8542311000
TARIC:
8542319000
MXHTS:
8542310302
ECCN:
EAR99

200V Level-Shift Gate Drivers

Infineon 200V Level-Shift Gate Drivers include 3-phase, half-bridge, or high- and low-side drivers for low (24V, 36V, and 48V) and medium voltage (60V, 80V, 100V, and 120V) motor control applications. The 3-phase product utilizes Infineon’s unique Silicon-On-Insulator (SOI) level-shift technology. This feature provides functional isolation, industry-leading negative VS robustness, and reduced level-shift losses. A solution with integrated Bootstrap Diodes (BSD) is also available to reduce BOM cost, simplify the layout, and reduce PCB size.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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