VS-4C30E3P07L-M3

Vishay Semiconductors
78-VS-4C30E3P07L-M3
VS-4C30E3P07L-M3

Mfr.:

Description:
SiC Schottky Diodes SicG4TO-2473L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 500

Stock:
500 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$11.10 $11.10
$7.38 $73.80
$6.08 $608.00
$5.15 $2,575.00
$4.70 $4,700.00

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247AD-3
Single
30 A
650 V
1,33 V
180 A
125 uA
- 55 C
+ 175 C
VS-4C30E3P07L-M3
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 273 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 500
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
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Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.