TGF2023-2-05

Qorvo
772-TGF2023-2-05
TGF2023-2-05

Mfr.:

Description:
GaN FETs DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB

Datasheet:
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This product may require additional documentation to export from the United States.

Availability

Stock:
Non-Stocked
Factory Lead-Time:
20 Weeks Estimated factory production time.
Minimum: 50   Multiples: 50
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$126.22 $6,311.00
$126.21 $12,621.00

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
Delivery Alerts:
 This product may require additional documentation to export from the United States.
RoHS:  
Die
N-Channel
Brand: Qorvo
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Packaging: Gel Pack
Product: RF JFET Transistors
Product Type: GaN FETs
Series: TGF2023
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN-on-SiC
Transistor Type: GaN HEMT
Type: GaN SiC HEMT
Part # Aliases: TGF2023 1099947
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5-0810-13

Datasheet

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CAHTS:
8541210000
CNHTS:
8541210000
USHTS:
8542390090
JPHTS:
8542330996
KRHTS:
8532331000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
3A001.b.3.b.4

TGF2023 GaN HEMT Transistors

Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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