T2G6003028-FL

Qorvo
772-T2G6003028-FL
T2G6003028-FL

Mfr.:

Description:
GaN FETs DC-6.0GHz 30 Watt 28V GaN Flanged

Datasheet:
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In Stock: 53

Stock:
53 Can Ship Immediately
Factory Lead-Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$480.53 $480.53
$356.21 $8,905.25

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
NI-200
Brand: Qorvo
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 30 W
Packaging: Tray
Product Type: GaN FETs
Series: T2G6003028
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Part # Aliases: T2G6003028 1100007
Unit Weight: 12.115 g
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CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8532331000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

T2G GaN HEMT Transistors

Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

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