T2G6000528-Q3

Qorvo
772-T2G6000528-Q3
T2G6000528-Q3

Mfr.:

Description:
GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about Qorvo T2G6000528-Q3

In Stock: 375

Stock:
375 Can Ship Immediately
Factory Lead-Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$164.94 $164.94
$160.14 $1,601.40
$114.91 $2,872.75
$104.04 $10,404.00

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
NI-200
N-Channel
650 mA
12.5 W
Brand: Qorvo
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Development Kit: T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
Gain: 15 dB
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 10 W
Packaging: Tray
Product Type: GaN FETs
Series: T2G6000528
Factory Pack Quantity: 100
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Part # Aliases: T2G6000528 1099997
Unit Weight: 7.396 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

This functionality requires JavaScript to be enabled.

CAHTS:
8542390000
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

T2G GaN HEMT Transistors

Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.