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STH65N050DM9-7AG

Name: STMicroelectronics STH65N050DM9-7AG
Brand: STMicroelectronics
SKU: 511-STH65N050DM9-7AG
Price: 13.73 CAD
Availability: InStock

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Mouser #:

511-STH65N050DM9-7AG

Mfr. #:

STH65N050DM9-7AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STH65N050DM9-7AG Datasheet (PDF)

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In Stock: 896

Stock:: 896

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On Order:: 1,000
Factory Lead-Time:: 22

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$13.73	$13.73
	$9.41	$94.10
	$7.49	$749.00
Full Reel (Order in multiples of 1000)
	$7.00	$7,000.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	H2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	100 nC
Minimum Operating Temperature:	- 50 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	266 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	MDmesh M9
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	29 ns
Unit Weight:	1.540 g

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Datasheet

STH65N050DM9-7AG Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.