SISF00DN-T1-GE3

Vishay Semiconductors
78-SISF00DN-T1-GE3
SISF00DN-T1-GE3

Mfr.:

Description:
MOSFETs 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD

Datasheet:
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Learn more about Vishay Semiconductors SISF00DN-T1-GE3

In Stock: 15,474

Stock:
15,474 Can Ship Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Packaging:
Full Reel (Order in multiples of 3000)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$3.48 $3.48
$2.24 $22.40
$1.52 $152.00
$1.21 $605.00
$1.17 $1,170.00
Full Reel (Order in multiples of 3000)
$1.09 $3,270.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
PowerPAK-1212-8SCD-8
N-Channel
2 Channel
30 V
60 A
4.2 mOhms
- 16 V, 20 V
2.1 V
53 nC
- 55 C
+ 150 C
69.4 W
Enhancement
TrenchFET, PowerPAK
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 10 ns
Forward Transconductance - Min: 130 S
Product Type: MOSFETs
Rise Time: 32 ns
Series: SISF
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 10 ns
Unit Weight: 488.500 mg
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Attributes selected: 0

CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 

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