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SCT4036DEC11

Name: ROHM Semiconductor SCT4036DEC11
Brand: ROHM Semiconductor
SKU: 755-SCT4036DEC11
Price: 20.4 CAD
Availability: InStock

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Mouser #:

755-SCT4036DEC11

Mfr. #:

SCT4036DEC11

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT4036DEC11 Datasheet

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Learn more about ROHM Semiconductor SCT4036DEC11

In Stock: 439

Stock:: 439 Can Ship Immediately

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Factory Lead-Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$20.40	$20.40
	$12.38	$123.80
	$11.90	$1,190.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package / Case:	TO-247N-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	42 A
Rds On - Drain-Source Resistance:	47 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	72 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	11 ns
Forward Transconductance - Min:	10 S
Packaging:	Tube
Product:	Power MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	22 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC Power MOSFET
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

SCT4036DEC11 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.