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PSMN1R8-80SSFJ

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See Product Specifications

Mouser #:

771-PSMN1R8-80SSFJ

Mfr. #:

PSMN1R8-80SSFJ

Mfr.:

Nexperia

Description:

MOSFETs SOT1235 N-CH 80V 270A

Datasheet:

PSMN1R8-80SSFJ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PSMN1R8-80SSFJ

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
Shipping Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-1235-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	270 A
Rds On - Drain-Source Resistance:	2.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	148 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	341 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	45 ns
Product Type:	MOSFETs
Rise Time:	33 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	40 ns
Part # Aliases:	934662271118

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Datasheet

PSMN1R8-80SSFJ Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

PCN

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NextPower 80/100V MOSFETs

Nexperia NextPower 80/100V MOSFETs are recommended for high-efficiency switching and high-reliability applications. The NextPower MOSFETs feature 50% lower R_DS(on) and a strong avalanche energy rating. The devices are ideally suited for power supply, telecom, industrial designs, USB-PD Type-C chargers and adapters, and 48V DC-DC adapters. The devices have low body diode losses with Q_rr down to 50 nano-coulombs (nC). This results in lower reverse recovery current (I_RR), lower voltage spikes (V_peak), and reduced ringing for further optimized dead time.