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NVMFWS0D63N04XMT1G

Name: onsemi NVMFWS0D63N04XMT1G
Brand: onsemi
SKU: 863-MFWS0D63N04XMT1G
Price: 5.6 CAD
Availability: InStock

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Mouser #:

863-MFWS0D63N04XMT1G

Mfr. #:

NVMFWS0D63N04XMT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10M IN S08FL PACKAGE

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMFWS0D63N04XMT1G Datasheet

ECAD Model:

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Learn more about onsemi NVMFWS0D63N04XMT1G

In Stock: 1,581

Stock:: 1,581 Can Ship Immediately

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Factory Lead-Time:: 50 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$5.60	$5.60
	$3.68	$36.80
	$2.58	$258.00
	$2.26	$1,130.00
	$2.10	$2,100.00
Full Reel (Order in multiples of 1500)
	$2.10	$3,150.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DFNW-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	384 A
Rds On - Drain-Source Resistance:	600 uOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	92.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	157 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Fall Time:	7.3 ns
Forward Transconductance - Min:	174 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	NVMFWS0D63N04XM
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	28 ns

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Datasheet

NVMFWS0D63N04XMT1G Datasheet

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.