It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTH4L022N120M3S

Name: onsemi NTH4L022N120M3S
Brand: onsemi
SKU: 863-NTH4L022N120M3S
Price: 28.41 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

863-NTH4L022N120M3S

Mfr. #:

NTH4L022N120M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 22MOHM 1

Datasheet:

NTH4L022N120M3S Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about onsemi NTH4L022N120M3S

In Stock: 1,471

Stock:: 1,471 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$28.41	$28.41
	$18.97	$189.70

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	68 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	151 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	352 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	13 ns
Forward Transconductance - Min:	34 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	24 ns
Series:	NTH4L022N120M3S
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	18 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTH4L022N120M3S Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NTH4L Silicon Carbide (SiC) MOSFETs

onsemi NTH4L Silicon Carbide (SiC) MOSFETs are a family of 1200V M3S planar SiC MOSFETs. The MOSFETs feature ultra-low gate charges and low switching losses. Some MOSFET models provide high-speed switching with low capacitance ratings. The NTH4L series is 100% avalanche tested and RoHS compliant. The onsemi NTH4L SiC MOSFETs are ideal for various power applications, including solar inverters, electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), energy storage systems, and switch-mode power supplies (SMPS).

M3S 1200V Silicon Carbide (SiC) MOSFETs

onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs are optimized for fast switching applications. The planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. The onsemi M3S 1200V MOSFETs provide optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The M3S offers low switching losses and is housed in a TO247-4LD package for low common source inductance.