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NSVBC144EDXV6T1G

Name: onsemi NSVBC144EDXV6T1G
Brand: onsemi
SKU: 863-NSVBC144EDXV6T1G
Price: 0.56 CAD
Availability: InStock

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Mouser #:

863-NSVBC144EDXV6T1G

Mfr. #:

NSVBC144EDXV6T1G

Mfr.:

onsemi

Description:

Digital Transistors SS SOT563 RSTR XSTR TR

Datasheet:

NSVBC144EDXV6T1G Datasheet

ECAD Model:

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Learn more about onsemi NSVBC144EDXV6T1G

In Stock: 4,000

Stock:: 4,000 Can Ship Immediately

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Factory Lead-Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$0.564	$0.56
	$0.348	$3.48
	$0.218	$21.80
	$0.163	$81.50
	$0.143	$143.00
	$0.127	$254.00
Full Reel (Order in multiples of 4000)
	$0.108	$432.00
	$0.092	$736.00
	$0.088	$2,112.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Digital Transistors
RoHS:
Configuration:	Dual
Transistor Polarity:	NPN
Typical Input Resistor:	4.7 kOhms
Typical Resistor Ratio:	1.0
Mounting Style:	SMD/SMT
Package / Case:	SOT-563
DC Collector/Base Gain hfe Min:	80
Collector- Emitter Voltage VCEO Max:	50 VDC
Continuous Collector Current:	100 mA
Pd - Power Dissipation:	357 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	NSBC144EDXV6
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Channel Mode:	Enhancement
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Maximum DC Collector Current:	100 mA
Operating Temperature Range:	- 55 C to + 150 C
Output Voltage:	4.9 V
Product Type:	Digital Transistors
Factory Pack Quantity:	4000
Subcategory:	Transistors

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Datasheet

NSVBC144EDXV6T1G Datasheet

Material Composition Disclosure

USHTS:: 8541210095
TARIC:: 8541210000
ECCN:: EAR99

Dual NPN Bipolar Digital Transistors

onsemi Dual NPN Bipolar Digital Transistors are designed to replace a single device and the additional external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors (a series base resistor and a base-emitter resistor). By integrating these individual components into a single device, the BRT on these onsemi NPN Bipolar Digital Transistors simplifies circuit design and eliminates them. A BRT also reduces system cost and board space.