(800) 346-6873

Part of the TTI Family of Specialists Contact Mouser (Kitchener) (800) 346-6873 Feedback

Change Location

In Stock

RoHS

Mfr.	Mfr. #:	Qty	Ext Total

View Cart

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NSF040120L3A0Q

Name: Nexperia NSF040120L3A0Q
Brand: Nexperia
SKU: 771-NSF040120L3A0
Price: 23.13 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

771-NSF040120L3A0

Mfr. #:

NSF040120L3A0Q

Mfr.:

Nexperia

Description:

SiC MOSFETs TO247 1.2KV 66A N-CH SIC

Datasheet:

NSF040120L3A0Q Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Nexperia NSF040120L3A0Q

In Stock: 207

Stock:: 207 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 207 will be subject to minimum order requirements.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$23.13	$23.13
	$18.25	$182.50
	$11.13	$5,676.30
	$10.61	$10,822.20
2,520	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	66 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	2.9 V
Qg - Gate Charge:	84 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	319 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9 ns
Product Type:	SiC MOSFETS
Rise Time:	20 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	57 ns
Part # Aliases:	934665927127

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NSF040120L3A0Q Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V SiC MOSFETs

Nexperia 1200V SiC MOSFETs are housed in 3-pin TO-247-3 and 4-pin TO-247-4 for through-hole PCB mounting. The Nexperia MOSFETs are ideal for high-power and high-voltage industrial applications thanks to excellent temperature stability and fast switching speed. These applications include E-vehicle charging infrastructures, photovoltaic inverters, and motor drives.