MAPC-A3005-ADTR1

MACOM
937-MAPC-A3005-ADTR1
MAPC-A3005-ADTR1

Mfr.:

Description:
GaN FETs Transistor, DC - 6 GHz, 8W, G28V5-1C

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about MACOM MAPC-A3005-ADTR1

In Stock: 187

Stock:
187 Can Ship Immediately
Factory Lead-Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$170.56 $170.56
$143.27 $1,432.70
$129.12 $12,912.00
Full Reel (Order in multiples of 1000)
$129.12 $129,120.00

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
SMD/SMT
PDFN-12
1 Channel
84 V
1.4 A
- 10 V, + 2 V
- 40 C
+ 85 C
8 W
Brand: MACOM
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Gain: 19 dB
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 39.9 dBm
Packaging: Reel
Packaging: Cut Tape
Product: GaN FETs
Product Type: GaN FETs
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: GaN, SiC
Type: SiC Transistor
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

USHTS:
8541290055
ECCN:
EAR99

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.