KTDM4G4B826BGIEAT

SMARTsemi
473-M4G4B826BGIEAT
KTDM4G4B826BGIEAT

Mfr.:

Description:
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Industrial

Datasheet:
ECAD Model:
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More Information
Learn more about SMARTsemi KTDM4G4B826BGIEAT

In Stock: 162

Stock:
162 Can Ship Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$17.84 $17.84
$16.71 $167.10
$14.79 $3,105.90
$14.41 $6,052.20
$14.05 $14,752.50
2,520 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
8 bit
1.333 GHz
FBGA-78
512 M x 8
1.14 V
1.26 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 210
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of VDD = 1.2V ± 5%, and VPP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).

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