(800) 346-6873

Part of the TTI Family of Specialists Contact Mouser (Kitchener) (800) 346-6873 Feedback

Change Location

In Stock

RoHS

Mfr.	Mfr. #:	Qty	Ext Total

View Cart

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

IXSH100N65L2KHV

Name: IXYS IXSH100N65L2KHV
Brand: IXYS
SKU: 747-IXSH100N65L2KHV
Price: 17.28 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

747-IXSH100N65L2KHV

Mfr. #:

IXSH100N65L2KHV

Mfr.:

IXYS

Description:

SiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSH100N65L2KHV Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about IXYS IXSH100N65L2KHV

In Stock: 550

Stock:: 550 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$17.28	$17.28
	$13.27	$132.70
	$9.65	$965.00
	$9.64	$4,338.00
	$8.04	$7,236.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	99 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	125 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	454 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	11.7 ns
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	26.5 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23.2 ns
Typical Turn-On Delay Time:	12.9 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXSH100N65L2KHV Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [R_DS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (I_D) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (V_DSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).