IXSA65N120L2-7TR

IXYS
747-IXSA65N120L2-7TR
IXSA65N120L2-7TR

Mfr.:

Description:
SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about IXYS IXSA65N120L2-7TR

In Stock: 78

Stock:
78 Can Ship Immediately
Factory Lead-Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 800)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$15.27 $15.27
$11.29 $112.90
$8.39 $839.00
$6.85 $3,425.00
Full Reel (Order in multiples of 800)
$6.83 $5,464.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7L
N-Channel
1 Channel
1.2 kV
65 A
53 mOhms
- 5 V, + 20 V
4.5 V
110 nC
- 55 C
+ 175 C
417 W
Enhancement
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 11.6 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 19.6 ns
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 20.8 ns
Typical Turn-On Delay Time: 11 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.