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ISC130N20NM6ATMA1

Name: Infineon ISC130N20NM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC130N20NM6ATMA
Price: 7.46 CAD
Availability: InStock

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Mouser #:

726-ISC130N20NM6ATMA

Mfr. #:

ISC130N20NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >150 - 400V

Datasheet:

ISC130N20NM6ATMA1 Datasheet (PDF)

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In Stock: 6,839

Stock:: 6,839 Can Ship Immediately

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Factory Lead-Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$7.46	$7.46
	$6.54	$65.40
	$4.73	$473.00
	$4.68	$2,340.00
	$4.65	$4,650.00
	$4.64	$11,600.00
Full Reel (Order in multiples of 5000)
	$4.38	$21,900.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TSON-8-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	88 A
Rds On - Drain-Source Resistance:	13 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	39 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	242 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	9 ns
Forward Transconductance - Min:	17 S
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	ISC130N20NM6 SP005987558

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Datasheet

ISC130N20NM6ATMA1 Datasheet (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

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Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next-generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilizes thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimized for synchronous rectification. These MOSFETs are available in various voltage nodes, including 40V, 100V, 120V, 135V, 150V, and 200V.

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