IR25601STRPBF
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See Product Specifications
See Product Specifications
942-IR25601STRPBF
IR25601STRPBF
Mfr.:
Description:
Gate Drivers 2Ch 600V Half Bridge 60mA 10-20V 50ns
Gate Drivers 2Ch 600V Half Bridge 60mA 10-20V 50ns
Datasheet:
In Stock: 1,308
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Stock:
-
1,308 Can Ship ImmediatelyAn unexpected error occurred. Please try again later.
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Factory Lead-Time:
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24 Weeks Estimated factory production time for quantities greater than shown.
Pricing (CAD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| Cut Tape / MouseReel™ † | ||
| $2.38 | $2.38 | |
| $1.74 | $17.40 | |
| $1.57 | $39.25 | |
| $1.39 | $139.00 | |
| $1.31 | $327.50 | |
| $1.26 | $630.00 | |
| $1.22 | $1,220.00 | |
| Full Reel (Order in multiples of 2500) | ||
| $1.17 | $2,925.00 | |
| $1.14 | $5,700.00 | |
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.
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Datasheet
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- Gate driver application matrix - Every switch needs a driver (PDF)
- HV Floating MOS Gate Drivers (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CAHTS:
- 8542310000
- CNHTS:
- 8542399000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
