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IKW30N65ET7XKSA1

Name: Infineon IKW30N65ET7XKSA1
Brand: Infineon Technologies
SKU: 726-IKW30N65ET7XKSA1
Price: 7.53 CAD
Availability: OutOfStock

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Mouser #:

726-IKW30N65ET7XKSA1

Mfr. #:

IKW30N65ET7XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs 650 V, 30 A IGBT with anti-parallel diode in TO-247 package

Datasheet:

IKW30N65ET7XKSA1 Datasheet (PDF)

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Factory Lead-Time:: 26 Weeks Estimated factory production time.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$7.53	$7.53
	$4.93	$49.30
	$3.86	$386.00
	$3.22	$1,545.60
	$2.99	$3,588.00
	$2.79	$7,365.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.35 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	188 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	IGBT7 T7
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	Not Available
Country of Origin:	DE
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKW30N65ET7 SP005348289

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Datasheet

IKW30N65ET7XKSA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Low Loss Duopack IGBTs

Infineon Technologies Low Loss Duopack IGBTs offer a robust humidity design with Trenchstop™ and Fieldstop™ technology. They feature a very soft, fast-recovery anti-parallel diode, short tail current, and very low V_CEsat.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.