IKW15N120T2

Infineon Technologies
726-IKW15N120T2
IKW15N120T2

Mfr.:

Description:
IGBTs LOW LOSS DuoPack 1200V 15A

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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Learn more about Infineon Technologies IKW15N120T2

In Stock: 284

Stock:
284 Can Ship Immediately
Factory Lead-Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$9.70 $9.70
$5.61 $56.10
$4.13 $413.00
$3.57 $1,713.60

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.7 V
- 20 V, 20 V
30 A
235 W
- 40 C
+ 175 C
Trenchstop IGBT3
Tube
Brand: Infineon Technologies
Continuous Collector Current Ic Max: 30 A
Country of Assembly: CN
Country of Diffusion: DE
Country of Origin: DE
Gate-Emitter Leakage Current: 600 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: SP000244961 IKW15N12T2XK IKW15N120T2FKSA1
Unit Weight: 38 g
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Datasheet

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CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

1200V Gen8 IGBTs

Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to +175°C.

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