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BSC072N04LDATMA1

Name: Infineon BSC072N04LDATMA1
Brand: Infineon Technologies
SKU: 726-BSC072N04LDATMA1
Price: 2.64 CAD
Availability: InStock

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Mouser #:

726-BSC072N04LDATMA1

Mfr. #:

BSC072N04LDATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 40V

Datasheet:

BSC072N04LDATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies BSC072N04LDATMA1

In Stock: 24,298

Stock:: 24,298

Can Ship Immediately

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On Order:: 20,000
Factory Lead-Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.64	$2.64
	$1.68	$16.80
	$1.12	$112.00
	$0.886	$443.00
	$0.802	$802.00
	$0.801	$2,002.50
Full Reel (Order in multiples of 5000)
	$0.749	$3,745.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	7.2 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	65 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	25 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	BSC072N04
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	BSC072N04LD SP002594350

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Datasheet

BSC072N04LDATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

OptiMOS™ Dual-Channel Super Cool Power MOSFETs

Infineon Technologies OptiMOS™ Dual-Channel Super Cool Power MOSFETs are N-channel power transistors in a SuperSO8 package with dual-cool capability for enhanced thermal performance. The Infineon OptiMOS Power MOSFETs are developed to increase efficiency, power density, and cost-effectiveness. These devices feature low on-state resistance (R_DS(on)) and low reverse recovery charge (Q_rr), increasing power density while improving robustness and system reliability. The +175°C rating facilitates designs with either more power at a higher operating junction temperature or a longer lifetime at the same operating junction temperature.