AT25PE80-MHN-Y

Renesas / Dialog
988-AT25PE80-MHN-Y
AT25PE80-MHN-Y

Mfr.:

Description:
NOR Flash 8 Mbit, Wide Vcc (1.7V to 3.6V), -40C to 85C, DFN 5x6 (Tray), Single SPI DataFlash (Micron M25PE Replacement)

Datasheet:
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In Stock: 1,162

Stock:
1,162 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$3.36 $3.36
$3.14 $31.40
$3.05 $76.25
$2.99 $149.50
$2.91 $291.00
$2.82 $705.00
$2.75 $1,567.50
$2.29 $2,610.60

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: NOR Flash
RoHS:  
SMD/SMT
UDFN-8
AT25PE80
8 Mbit
1.7 V
3.6 V
16 mA
SPI
85 MHz
1 M x 8
8 bit
- 40 C
+ 85 C
Tray
Brand: Renesas / Dialog
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Product Type: NOR Flash
Speed: 85 MHz
Factory Pack Quantity: 570
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320040
CNHTS:
8542329090
USHTS:
8542320051
TARIC:
8542326100
MXHTS:
8542320299
ECCN:
EAR99

AT25PE80 Series Serial Flash Memory

Renesas / Dialog AT25PE80 Series 8-Mbit DataFlash-L Page Erase Serial Flash Memory is a 1.7V minimum, serial-interface sequential access flash memory. This AT25PE80 Series memory device features 8,650,752 bits of memory organized as 4,096 pages of 256 bytes or 264 bytes each. The AT25PE80 series operates from a single 1.7V to 3.6V power supply for the erase, program, and read operations. The AT25PE80 series flash memory contains two SRAM buffers of 256 or 264 bytes each in addition to the main memory. These SRAM buffers can be used as additional system scratchpad memory. The AT25PE80 series is ideally suited for a wide variety of digital voice, image, program code, and data storage applications.

25PE Dataflash-L Serial Flash Memory

Renesas / Dialog 25PE Dataflash-L Serial Flash Memories are low pin count, wide voltage range, ultra-low power, and page erase sequential access memories. These Adesto Technologies memory chips enable energy-efficient, lower-cost systems through advanced command-rich interface and granular architecture. The 25PE Dataflash-L memories reduce CPU/MCU overheads, reduce the power signature, and extend battery life. These flash memories support RapidS™ serial interface for applications requiring a high-speed operation. The 25PE flash memories use simple sequential access to simplify hardware layout, increase system reliability, minimize switching noise, and reduce package size. These memory chips are enabled through the Chip Select (CS) pin and are accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

DataFlash™ SPI Memory

Renesas / Dialog DataFlash™ SPI Memory devices are feature-rich, page-erase (as small as 256 bytes) SPI-compatible Serial Flash with advanced protection and security features. These devices provide developers with the most flexible, easy-to-use Serial Flash solution on the market to address virtually any application. Dual-I/O and Quad-I/O interface options provide the ability to double and quadruple read throughputs. The DataFlash SPI Memory devices provide system developers with an extremely flexible solution by utilizing a page-erase architecture to allow the smallest amount of data (as little as 256 bytes) to be erased compared to any other Flash solution.

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