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B78541X0001

Name: TDK B78541X0001
Brand: EPCOS / TDK
SKU: 871-B78541X0001
Price: 59.52 CAD
Availability: InStock

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Mouser #:

871-B78541X0001

Mfr. #:

B78541X0001

Mfr.:

EPCOS / TDK

Description:

Pulse Transformers SMD B78541 UI Transformer Sample Kit

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

B78541X0001 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about EPCOS / TDK B78541X0001

In Stock: 5

Stock:: 5

Can Ship Immediately

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On Order:: 5
Factory Lead-Time:: 25

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$59.52	$59.52
	$51.70	$517.00
	$49.84	$1,246.00
	$46.59	$4,659.00
500	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	TDK
Product Category:	Pulse Transformers
RoHS:
Mounting Style:	SMD/SMT
Height:	9.7 mm
Brand:	EPCOS / TDK
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Maximum Operating Temperature:	+ 150 C
Minimum Operating Temperature:	- 40 C
Packaging:	Bulk
Series:	InsuGate
Factory Pack Quantity:	1
Subcategory:	Transformers
Part # Aliases:	B78541X1

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Datasheet

B78541X0001 Datasheet (PDF)

USHTS:: 8504312000
JPHTS:: 850431000
ECCN:: EAR99

B78541A InsuGate Gate-Drive Transformers

EPCOS / TDK B78541A InsuGate Gate-Drive Transformers are available in a compact, surface-mount package measuring 13.85mm x 10.5mm x 9.2mm. The construction features a ferrite core, SMD gullwing pins, triple-insulated wire, and a plastic bobbin. The B78541A series is qualified according to AEC-Q200 and AQG 324 vibration profiles. The transformers operate within a 100kHz to 500kHz frequency range and -40°C to 150°C temperature range. EPCOS / TDK B78541A InsuGate Gate-Drive Transformers are used in switch-mode power supplies (bridge topologies), isolated DC/DC converters, gate driver circuits, and galvanically isolated single-channel IGBT driver ICs. The B78541A devices are also suitable for SiC or GaN semiconductors and gate driver applications for IGBTs and MOSFETs in e-mobility applications.