CAB425M12XM3

Wolfspeed
941-CAB425M12XM3
CAB425M12XM3

Mfr.:

Description:
Discrete Semiconductor Modules 1.2kV 425A SiC HalfBridge Module

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In Stock: 95

Stock:
95
Can Ship Immediately
On Order:
72
Expected 2026-06-18
28
Expected 2026-06-22
Factory Lead-Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$1,076.96 $1,076.96

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS:  
SiC Modules
Half Bridge
SiC
5.4 V
1.2 kV
- 4 V, + 15 V
Screw Mount
Module
- 40 C
+ 175 C
XM3
Bulk
Brand: Wolfspeed
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Id - Continuous Drain Current: 425 A
Pd - Power Dissipation: 50 mW
Product Type: Discrete Semiconductor Modules
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Unit Weight: 503.496 g
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CAHTS:
8541290000
CNHTS:
8504409100
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CAB425M12XM3 SiC Half-Bridge Module

Wolfspeed CAB425M12XM3 SiC Half-Bridge Module maximizes the benefits of SiC while keeping system design robust, simple, and cost-effective. The module is half the weight and volume of a standard 62mm module. The XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3’s SiC-optimized packaging enables a +175°C continuous junction operation. It has a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is an ideal fit for demanding applications like electric vehicle chargers, uninterruptable power supplies (UPS), and traction drives.

XM SiC Half-Bridge Modules

Wolfspeed XM Half-Bridge Modules feature a high power density footprint that implements third-generation MOSFET technology with switching-loss or conduction-loss optimization. The XM power module platform maximizes the performance benefits of silicon carbide while keeping the module and system design robust, simple, and cost-effective. With silicon carbide packaging, continuous junction operation at +175°C is achieved, reinforced by a high-reliability silicon nitride (Si3N4) power substrate that ensures mechanical durability even in extreme environments. The high power density and low loop inductance of XM SiC power modules can benefit many applications. The Wolfspeed XM series is ideal for systems that can benefit from a several-factor increase in switching speeds with full SiC modules. These include applications where greater efficiency and reduced module count can result in operational and system-level cost savings, such as industrial, energy storage, transportation, and power generation.