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LMG3526R050RQST

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Mouser #:

595-LMG3526R050RQST

Mfr. #:

LMG3526R050RQST

Mfr.:

Texas Instruments

Description:

Gate Drivers 650-V 50-mâ„¦ GaN FE T With Integrated D

Datasheet:

LMG3526R050RQST Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Product:	GaN FET
Mounting Style:	SMD/SMT
Package / Case:	VQFN-52
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3526R050
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Input Voltage - Max:	18 V
Input Voltage - Min:	7.5 V
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Factory Pack Quantity:	250
Subcategory:	PMIC - Power Management ICs

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Datasheet

LMG3526R050RQST Datasheet

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USHTS:: 8542390090
ECCN:: EAR99

LMG3526R050 650V GaN FET

Texas Instrument LMG3526R050 650V GaN FET with integrated driver and protection targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R050 integrates a silicon driver that enables switching speeds up to 150V/ns. TI offers integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers minimal ringing and clean switching in hard-switching power supply topologies. The adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns. This control can be used to control EMI and actively optimize switching performance.