It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD25501F3

Name: Texas Instruments CSD25501F3
Brand: Texas Instruments
SKU: 595-CSD25501F3
Price: 0.58 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

595-CSD25501F3

Mfr. #:

CSD25501F3

Mfr.:

Texas Instruments

Description:

MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25501F3T

Datasheet:

CSD25501F3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Texas Instruments CSD25501F3

In Stock: 7,249

Stock:: 7,249 Can Ship Immediately

An unexpected error occurred. Please try again later.
Factory Lead-Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 1370

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.58	$0.58
	$0.354	$3.54
	$0.223	$22.30
	$0.166	$83.00
	$0.146	$146.00
Full Reel (Order in multiples of 3000)
	$0.146	$438.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

CSD25501F3T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.14

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. #:

CSD25501F3T

Description:

MOSFETs #NAME?

Compare With Current Part

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.6 A
Rds On - Drain-Source Resistance:	260 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.05 V
Qg - Gate Charge:	1.02 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Fall Time:	945 ns
Forward Transconductance - Min:	3.4 S
Product Type:	MOSFETs
Rise Time:	428 ns
Series:	CSD25501F3
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	1154 ns
Typical Turn-On Delay Time:	474 ns
Unit Weight:	0.300 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CSD25501F3 Datasheet

SPICE Models

CSD25501F3 PSPICE Model

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

CSD25501F3 –20V 64mΩ, P-Channel FemtoFET™ MOSFET

Texas Instruments CSD25501F3 –20V 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on the duty cycle. The gate leakage (IGSS) through the diode of the Texas Instruments CSD25501F3 increases as VGS is increased above –6V.