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CSD25484F4

Name: Texas Instruments CSD25484F4
Brand: Texas Instruments
SKU: 595-CSD25484F4
Price: 0.7 CAD
Availability: InStock

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Mouser #:

595-CSD25484F4

Mfr. #:

CSD25484F4

Mfr.:

Texas Instruments

Description:

MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25484F4T

Datasheet:

CSD25484F4 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25484F4

In Stock: 9,441

Stock:: 9,441 Can Ship Immediately

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Factory Lead-Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.702	$0.70
	$0.427	$4.27
	$0.271	$27.10
	$0.203	$101.50
	$0.18	$180.00
Full Reel (Order in multiples of 3000)
	$0.151	$453.00
	$0.136	$816.00
	$0.116	$1,044.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

CSD25484F4T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.20

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. #:

CSD25484F4T

Description:

MOSFETs 20V P-Ch FemtoFET MO SFET A 595-CSD25484 A 595-CSD25484F4

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	825 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	1.09 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	8.5 ns
Forward Transconductance - Min:	3.5 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	CSD25484F4
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	0.400 mg

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CAHTS:: 8542390000
CNHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.