It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD19531KCS

Name: Texas Instruments CSD19531KCS
Brand: Texas Instruments
SKU: 595-CSD19531KCS
Price: 4.07 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

595-CSD19531KCS

Mfr. #:

CSD19531KCS

Mfr.:

Texas Instruments

Description:

MOSFETs 100V 6.4mOhm Pwr MOS FET

Datasheet:

CSD19531KCS Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Texas Instruments CSD19531KCS

In Stock: 977

Stock:: 977

Can Ship Immediately

An unexpected error occurred. Please try again later.
On Order:: 1,000
Factory Lead-Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$4.07	$4.07
	$2.01	$20.10
	$1.80	$180.00
	$1.45	$725.00
	$1.36	$1,360.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Series:	CSD19531KCS
Packaging:	Tube
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4.1 ns
Id - Continuous Drain Current:	200 A
Number of Channels:	1 Channel
Pd - Power Dissipation:	179 W
Product Type:	MOSFETs
Qg - Gate Charge:	38 nC
Rds On - Drain-Source Resistance:	7.7 mOhms
Rise Time:	7.2 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	8.4 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CSD19531KCS Datasheet

Images

PCN

Qualification of GTBF as Additional Assembly/Test Site for Select Devices (PDF)

SPICE Models

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.