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STGD5H60DF

Name: STMicroelectronics STGD5H60DF
Brand: STMicroelectronics
SKU: 511-STGD5H60DF
Price: 1.83 CAD
Availability: InStock

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Mouser #:

511-STGD5H60DF

Mfr. #:

STGD5H60DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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Datasheet:

STGD5H60DF Datasheet (PDF)

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In Stock: 2,873

Stock:: 2,873 Can Ship Immediately

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Factory Lead-Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.83	$1.83
	$1.14	$11.40
	$0.753	$75.30
	$0.593	$296.50
	$0.532	$532.00
Full Reel (Order in multiples of 2500)
	$0.436	$1,090.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package / Case:	DPAK-3 (TO-252-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	10 A
Pd - Power Dissipation:	83 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGD5H60DF
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	10 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	2500
Subcategory:	IGBTs
Unit Weight:	330 mg

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Datasheet

STGD5H60DF Datasheet (PDF)

PCN

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.