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STDRIVEG600

Name: STMicroelectronics STDRIVEG600
Brand: STMicroelectronics
SKU: 511-STDRIVEG600
Price: 8.01 CAD
Availability: InStock

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Mouser #:

511-STDRIVEG600

Mfr. #:

STDRIVEG600

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage half-bridge gate driver for GaN transistors

Complete Your Design

Datasheet:

STDRIVEG600 Datasheet (PDF)

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Learn more about STMicroelectronics STDRIVEG600

In Stock: 811

Stock:: 811

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On Order:: 1,000
Factory Lead-Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$8.01	$8.01
	$6.12	$61.20
	$5.37	$134.25
	$5.12	$512.00
	$4.88	$1,220.00
	$4.73	$2,365.00
	$4.32	$4,320.00
	$4.19	$8,380.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package / Case:	SOIC-16
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Output Current:	5.5 A, 6 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	20 V
Rise Time:	7 ns
Fall Time:	5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	IT
Logic Type:	CMOS, TTL
Moisture Sensitive:	Yes
Output Voltage:	520 V
Product Type:	Gate Drivers
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

STDRIVEG600 Datasheet (PDF)

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CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.