STD16N50M2

STMicroelectronics
511-STD16N50M2
STD16N50M2

Mfr.:

Description:
MOSFETs N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
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Datasheet:
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In Stock: 2,834

Stock:
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Factory Lead-Time:
16 Weeks Estimated factory production time for quantities greater than shown.
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Full Reel (Order in multiples of 2500)

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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
SMD/SMT
STD16N50M2
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: SG
Fall Time: 10 ns
Id - Continuous Drain Current: 13 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Number of Channels: 1 Channel
Package / Case: DPAK-3 (TO-252-3)
Pd - Power Dissipation: 110 W
Product Type: MOSFETs
Qg - Gate Charge: 19.5 nC
Rds On - Drain-Source Resistance: 240 mOhms
Rise Time: 7.6 ns
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: Si
Tradename: MDmesh
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 9.6 ns
Vds - Drain-Source Breakdown Voltage: 550 V
Vgs - Gate-Source Voltage: - 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Unit Weight: 330 mg
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Datasheet

PCN

CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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