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PWD5F60

Name: STMicroelectronics PWD5F60
Brand: STMicroelectronics
SKU: 511-PWD5F60
Price: 7.38 CAD
Availability: InStock

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Mouser #:

511-PWD5F60

Mfr. #:

PWD5F60

Mfr.:

STMicroelectronics

Description:

Gate Drivers High-density power driver - High voltage full bridge with integrated comparators

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Datasheet:

PWD5F60 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics PWD5F60

In Stock: 324

Stock:: 324 Can Ship Immediately

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Factory Lead-Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 324 will be subject to minimum order requirements.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$7.38	$7.38
	$5.63	$56.30
	$5.19	$129.75
	$4.70	$470.00
	$4.47	$1,117.50
	$4.33	$2,165.00
	$4.15	$4,233.00
	$4.01	$8,180.40
5,100	Quote

Alternative Packaging

Mfr. Part #:

PWD5F60TR

Packaging:

Reel, Cut Tape

Availability:

In Stock

Price:

$6.85

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	MOSFET Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package / Case:	VFQFPN-15
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	3.5 A
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	PWD5F60
Packaging:	Tray
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Moisture Sensitive:	Yes
Pd - Power Dissipation:	5 W
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	1.38 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	1020
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Unit Weight:	120 mg

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Attributes selected: 0

Filter Document:

CNHTS:: 8542319090
USHTS:: 8542390090
ECCN:: EAR99

PWD5F60 High Density Power Driver

STMicroelectronics PWD5F60 High Density Power Driver combines gate drivers and four N-channel power MOSFETs in a dual half-bridge configuration into a single, compact System-in-Package (SiP) device. The integrated power MOSFETs have a drain-source on resistance, or RDS(ON), of 1.38Ω and a drain-source breakdown voltage of 600V. The high side for the embedded gate drivers can be easily supplied by the integrated bootstrap diode. The high integration of the PWD5F60 Power Driver enables efficient drive loads in space-constrained applications.

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