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MSC025SMB120B4N

Name: Microchip MSC025SMB120B4N
Brand: Microchip Technology
SKU: 579-MSC025SMB120B4N
Price: 20.72 CAD
Availability: InStock

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Mouser #:

579-MSC025SMB120B4N

Mfr. #:

MSC025SMB120B4N

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

MSC025SMB120B4N Datasheet (PDF)

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Learn more about Microchip Technology MSC025SMB120B4N

In Stock: 59

Stock:: 59 Can Ship Immediately

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Factory Lead-Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$20.72	$20.72
	$19.12	$573.60
	$16.64	$1,996.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	81 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 21 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	109 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	357 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	6.2 ns
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	16 ns

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Datasheet

MSC025SMB120B4N Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.