MSC025SMA120B

Microchip Technology
494-MSC025SMA120B
MSC025SMA120B

Mfr.:

Description:
SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247
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In Stock: 132

Stock:
132 Can Ship Immediately
Factory Lead-Time:
11 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$61.20 $61.20
$56.44 $1,693.20
$49.11 $5,893.20

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
113 A
31 mOhms
- 10 V, + 23 V
1.9 V
232 nC
- 55 C
+ 175 C
577 W
Enhancement
Brand: Microchip Technology
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 25 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 15 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 38 ns
Typical Turn-On Delay Time: 63 ns
Unit Weight: 6 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

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