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MSC025SMA120B4N

Name: Microchip MSC025SMA120B4N
Brand: Microchip Technology
SKU: 579-MSC025SMA120B4N
Price: 44.8 CAD
Availability: InStock

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Mouser #:

579-MSC025SMA120B4N

Mfr. #:

MSC025SMA120B4N

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

MSC025SMA120B4N Datasheet (PDF)

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Learn more about Microchip Technology MSC025SMA120B4N

In Stock: 19

Stock:: 19 Can Ship Immediately

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$44.80	$44.80
	$41.33	$1,239.90
	$35.96	$4,315.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	113 A
Rds On - Drain-Source Resistance:	31 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	232 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	577 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	16 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	23 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	17 ns

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Datasheet

MSC025SMA120B4N Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.