CGH40010F

Name: MACOM CGH40010F
Brand: MACOM
SKU: 941-CGH40010F
Price: 146.86 CAD
Availability: InStock

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Mouser #:

941-CGH40010F

Mfr. #:

CGH40010F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT DC-6.0GHz, 10 Watt

Datasheet:

CGH40010F Datasheet (PDF)

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In Stock: 2,958

Stock:: 2,958

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On Order:: 4,063
Factory Lead-Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$146.86	$146.86
	$113.25	$1,132.50
	$110.26	$11,026.00
500	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package / Case:	440166
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	1.5 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	CGH40010-TB
Gain:	14.5 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	2 GHz
Output Power:	12.5 W
Packaging:	Tray
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	7.396 g

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Datasheet

CGH40010F Datasheet (PDF)

PCN

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.