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IMBG65R010M2HXTMA1

Name: Infineon IMBG65R010M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMBG65R010M2HXTM
Price: 35.97 CAD
Availability: InStock

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Mouser #:

726-IMBG65R010M2HXTM

Mfr. #:

IMBG65R010M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMBG65R010M2HXTMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMBG65R010M2HXTMA1

In Stock: 360

Stock:: 360 Can Ship Immediately

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Factory Lead-Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$35.97	$35.97
	$26.86	$268.60
	$23.23	$2,323.00
Full Reel (Order in multiples of 1000)
	$23.23	$23,230.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	158 A
Rds On - Drain-Source Resistance:	13.1 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	112 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	535 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	9.4 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	24 ns
Series:	650V G2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	CoolSiC MOSFET
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	IMBG65R010M2H SP005961932

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Datasheet

IMBG65R010M2HXTMA1 Datasheet (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 650V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 650V G2 Silicon Carbide MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion. Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives, and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.