FM25L04B-DG

Infineon Technologies
877-FM25L04B-DG
FM25L04B-DG

Mfr.:

Description:
F-RAM 4Kb Serial SPI 3V FRAM

ECAD Model:
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In Stock: 1,814

Stock:
1,814 Can Ship Immediately
Factory Lead-Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$2.85 $2.85
$2.67 $26.70
$2.59 $64.75
$2.52 $126.00
$2.46 $246.00
$2.39 $597.50
$2.33 $1,165.00
$2.00 $2,000.00
$1.98 $4,950.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
4 kbit
SPI
20 MHz
512 k x 8
DFN-8
2.7 V
3.6 V
- 40 C
+ 85 C
FM25L04B-DG
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 1620
Subcategory: Memory & Data Storage
Unit Weight: 50.300 mg
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CAHTS:
8542320090
CNHTS:
8542329090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
EAR99

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan.